| New Product ‘lllvVISHM ____________________________§§EE§E￡￥EE§E7 Vishay General Semiconductor RATINGS AND cHARAcTERIsT|cs cuRvEs(T A : 25 °C unless otherwise noted) 100 Resistive or Inductive Load 3 0.01 TL measured at the Cathode Band Termmal Instantaneous Reverse Current (mA) c Average Forward Rectified Current (A) an 90 100 I10 I20 130 140 I50 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (°/o) Fig. 1 - Maximum FonNard Current Derating Curve Fig. A - Typical Reverse Characteristics E Le m 0) m o o c3 § 100 4 e O {E n- 0§ é> : o) o ( % 10 0 0.5 1.0 1.5 2 0 2.5 3.0 3.5 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - FonNard Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 1 00 —= Junction to Ambient Instantaneous Forward Current (A) 3Transient Thermal Impedance ("C/W) O 0 2 0.4 0 6 0.5 1.0 1.2 Instantaneous Forward Voltage (V) t- Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Document Number: 88987 For technical questions within your region, please contact one of the following: www.visnay.oom Revision: 19-Apr-11 DiodesAmer|cas@v|shay.com, DiodesAsia@visnay_com, D|odesEurope@vishay_com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay_com/doc?91000 |